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RoHS: true
Type: 2 P-Channel
Category: Triode/MOS Tube/Transistor/MOSFETs
Operating Temperature: -55°C~+150°C@(Tj)
Power Dissipation (Pd): 625mW
Total Gate Charge (Qg@Vgs): 1.4nC@4.5V
Drain Source Voltage (Vdss): 20V
Input Capacitance (Ciss@Vds): 100pF@10V
Continuous Drain Current (Id): 350mA
Gate Threshold Voltage (Vgs(th)@Id): 1.5V@250uA
Drain Source On Resistance (RDS(on)@Vgs,Id): 1.2Ω@4.5V,350mA
Package: SOT-563
Manufacturer: onsemi
Series: PowerTrench®
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 350mA
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 350mA, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 100pF @ 10V
Power - Max: 446mW
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563F
Base Part Number: FDY20
detail: Mosfet Array 2 P-Channel (Dual) 20V 350mA 446mW Surface Mount SOT-563F